Infrared Lamp Heating System : Infrared Lamp Heating System RTP-6
80°C/s high speed annealing possible at low cost
This system has been developed for low cost and R&D.
Features
• Capable of high speed heat treatment.
• Capable of high speed cooling with the metal chamber cold-wall Cconstruction.
• Gas flow after vacuum displacement is also available.
• Temperature program setting and external signal input is easily executed from a PC.
• Temperature data during heating can also be displayed on a PC.
• A quartz protection plate (optional) can be installed in the chamber to prevent contamination.
• Equipped with various safety measures.
• Capable of excellent temperature distribution and reproducibility with the 9 zone control.
Specifications
|
Temperature Range |
RT ～ 1100 °C |
|
Sample Size |
6-inch wafer 1 piece (4 or 5-inch wafer is optional.) |
|
Atmosphere |
In Static gas, Gas flow, Air, Vacuum (Vacuum pumping system is optional.) |
|
Heating Method |
Top single-side heating method by paraboloidal surface reflected infrared lamp |
|
Maximum Heating Rate |
80 °C/s |
|
Uniform Temp. Precision |
ΔT = 10 °C at 800 °C being maintained in N2 |
|
Control Sensor |
Thermocouple JIS "K" (inserted in SiC coated carbon susceptor), pyrometer (option) |